KSM90N10V2/ksmf90n10v2 100v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for dc to dc converters, sychronous rectification, and other applications lowest rds(on) is required. features ? 90 a, 100v, r ds(on) = 0.01 ? @v gs = 10 v ? low gate charge ( typical 147 nc) ? low crss ( typical 300 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter KSM90N10V2 ksmf90n10v2 units v dss drain-source voltage 100 v i d drain current - continuous (t c = 25c) 90 90 * a - continuous (t c = 100c) 68 68 * a i dm drain current - pulsed (note 1) 360 360 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 2430 mj i ar avalanche current (note 1) 90 a e ar repetitive avalanche energy (note 1) 25 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 250 83 w - derate above 25c 1.67 0.55 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter KSM90N10V2 ksmf90n10v2 units r jc thermal resistance, junction-to-case 0.6 1.8 c / w r js thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w to-220 to-220f ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? s d g 2014-6-29 1 www.kersemi.com
t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 0.3mh, i as = 90a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 90a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 100 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.1 -- v/c i dss zero gate voltage drain current v ds = 100 v, v gs = 0 v -- -- 1 a v ds = 80 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 45 a -- 8.5 10 m ? g fs forward transconductance v ds = 40 v, i d = 45 a (note 4) -- 72 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 4730 6150 pf c oss output capacitance -- 1180 1530 pf c rss reverse transfer capacitance -- 300 390 pf switching characteristics t d(on) turn-on delay time v dd = 50 v, i d = 90 a, r g = 25 ? (note 4, 5) -- 52 114 ns t r turn-on rise time -- 492 994 ns t d(off) turn-off delay time -- 304 618 ns t f turn-off fall time -- 355 720 ns q g total gate charge v ds = 80 v, i d = 90 a, v gs = 10 v (note 4, 5) -- 147 191 nc q gs gate-source charge -- 28 -- nc q gd gate-drain charge -- 60 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 90 a i sm maximum pulsed drain-source diode forward current -- -- 360 a v sd drain-source diode forward voltage v gs = 0 v, i s = 90 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 90 a, di f / dt = 100 a/ s (note 4) -- 114 -- ns q rr reverse recovery charge -- 0.54 -- c electrical characteristics KSM90N10V2/ksmf90n10v2 2014-6-29 2 www.kersemi.com
typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 10 2 175 c 25 c -55 c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [m ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 10 2 175 c notes : 1. v gs = 0v 2. 250 s pulse test 25 c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 v ds = 50v v ds = 80v note : i d = 90a v gs , gate-source voltage [v] q g , total gate charge [nc] figure 2. transfer characteristics figure 1. on-region characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature KSM90N10V2/ksmf90n10v2 2014-6-29 3 www.kersemi.com
typical characteristics (continued) figure 10. maximum drain current vs case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 45 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 c 2. t j = 175 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 c 2. t j = 175 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 i d , drain current [a] t c , case temperature [ c] figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-1. maximum safe operating area for fqp90n10v2 figure 9-2. maximum safe operating area for fqpf90n10v2 KSM90N10V2/ksmf90n10v2 2014-6-29 4 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1. z jc (t) = 1.8 c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm ? t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n o tes : 1. z jc (t) = 0.6 c/w max. 2. d uty f actor, d = t 1 /t 2 3. t jm ? t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s q u are w ave p ulse d uration [se c] typical characteristics (continued) figure 11-1. transient thermal response curve for fqp90n10v2 figure 11-2. transient thermal response curve for fqpf90n10v2 t 1 p dm t 2 t 1 p dm t 2 KSM90N10V2/ksmf90n10v2 2014-6-29 5 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p KSM90N10V2/ksmf90n10v2 2014-6-29 6 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- KSM90N10V2/ksmf90n10v2 2014-6-29 7 www.kersemi.com
package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 KSM90N10V2/ksmf90n10v2 2014-6-29 8 www.kersemi.com
package dimensions (continued) (7.00) (0.70) max1.47 (30 3.18 0.05 to-220f KSM90N10V2/ksmf90n10v2 2014-6-29 9 www.kersemi.com
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